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半导体器件的测量中,对结电容的准确测量具有很重要的意义。因为它不但可获得p-n结与肖特基结的结性质及体材料掺杂分布的有关信息,也是研究交界层的有力分析工具.近年来,结电容的测量可用来探测材料的微量杂质或缺陷及其有关的某些物理参数. 由于结电容本身并不大,精密测量又
In the measurement of semiconductor devices, accurate measurement of junction capacitance is of great importance. Because it can not only get information about the junction properties of pn junctions and Schottky junctions and the doping and distribution of bulk materials, it is also a powerful analytical tool for studying the interface layer. In recent years, the junction capacitance measurement can be used to detect trace impurities or defects And its related to some of the physical parameters.As the junction capacitance itself is not large, precision measurement again