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在均匀的高电场应力下 ,MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。这是由于在应力过程中产生的缺陷引起的。在本文中 ,用比例差分方法从NMOSFET器件的输出特性提取了阈值电压、输出特性的比例差分的峰值和界面陷阱密度。得到了阈值电压和比例差分峰值 ,界面陷阱密度和应力时间的关系。此种方法也适用于PMOSFET器件。这是一个简单而快捷的技术。用这个技术实验数据可以在测量的过程中进行分析
Under uniform high electric field stress, the proportional difference peak value of the threshold voltage and output characteristic of the MOSFET device will change. This is due to the defects created in the stress process. In this paper, the threshold voltage, the peak of the proportional difference of the output characteristic, and the interface trap density are extracted from the output characteristics of the NMOSFET device using the proportional-difference method. The relationship between threshold voltage and proportional difference peak, interface trap density and stress time is obtained. This method is also applicable to PMOSFET devices. This is a simple and quick technique. Using this technique, experimental data can be analyzed during the measurement