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用磁控溅射法制备了Al/Sb多层薄膜,通过X射线衍射(XRD)、X射线荧光(XRF)、Hall效应、暗电导率温度关系及透过谱的测试研究了退火前后薄膜的结构和性质。XRD测试结果表明,刚沉积的薄膜只有Sb的结晶相,而Al则以非晶态形式存在,500℃退火后化合为AlSb多晶,且沿(111)择优取向。Hall效应测试、电导激活能及光能隙的计算结果表明,所制备的AlSb多晶薄膜为P型材料,且载流子浓度为1019cm-3,光能隙为1.64eV,电导率随温度的变化可分为两个过程,在30℃到110℃,薄膜的电导率随温度的增加而缓慢增加,而在110℃到260℃间增加明显,升温电导激活能为0.11eV和0.01eV,这与AlSb多晶薄膜在升温过程中的结构变化有关。将制备的AlSb多晶薄膜应用于TCO/CdS/AlSb/ZnTe:Cu/Au结构的太阳电池器件中,已观察到明显的光伏效应,说明用这种方法制备的AlSb多晶薄膜适于作太阳电池的吸收层。
The Al / Sb multilayered films were prepared by magnetron sputtering. The effects of XRD, X-ray fluorescence (XRF), Hall effect, dark conductivity temperature and transmission spectra were investigated. Structure and nature. The results of XRD showed that the as-deposited film had only the crystalline phase of Sb, while Al existed in the amorphous form. After annealed at 500 ℃, AlSb polycrystal was synthesized and oriented along the (111) preferential orientation. The results of Hall effect test, conductance activation energy and optical energy gap show that the prepared AlSb polycrystalline thin film is a P-type material with a carrier concentration of 1019cm-3 and a photo-energy gap of 1.64eV. The conductivity changes with the temperature The change can be divided into two processes. At 30 ℃ to 110 ℃, the conductivity of the films increases slowly with the increase of temperature, but increases obviously at 110 ℃ to 260 ℃, and the activation energy of heating conductance is 0.11eV and 0.01eV And AlSb polycrystalline thin film structure changes in the heating process. The AlSb polycrystalline thin film prepared by the application of TCO / CdS / AlSb / ZnTe: Cu / Au structure of solar cell devices, have been observed obvious photovoltaic effect, indicating that the AlSb polycrystalline thin film prepared in this way is suitable for the sun Battery absorption layer.