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基于FUKUI噪声模型,分析了GaN高电子迁移率晶体管(HEMT)器件的高频噪声特性,结果表明,由于GaN HEMT具有更高的临界电场和更大的电子饱和速度,与第2代半导体器件(GaAs HEMT等)相比具有更优越的噪声性能。对近10多年来国内外在GaN HEMT低噪声器件及其低噪声功率放大器单片集成电路(MMIC)方面的研究进行了综述,并分析了GaN HEMT在低噪声应用领域目前存在的主要问题及其发展趋势。
Based on the FUKUI noise model, the high frequency noise characteristics of a GaN HEMT device are analyzed. The results show that the GaN HEMT has the same performance as the second generation semiconductor device (HEMT) due to its higher critical electric field and higher electron saturation speed GaAs HEMT, etc.) compared to have superior noise performance. In the recent 10 years, the research on GaN HEMT low noise devices and their low noise power amplifier monolithic integrated circuits (MMICs) both at home and abroad has been reviewed and the main problems existing in low noise applications of GaN HEMTs and their development trend.