【摘 要】
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In order to clarify the origin of the efficiency droop effect in InGaN based blue multiple-quantum-well (MQW)light emitting diodes (LEDs),a reasonable model is
【机 构】
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Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Opto
论文部分内容阅读
In order to clarify the origin of the efficiency droop effect in InGaN based blue multiple-quantum-well (MQW)light emitting diodes (LEDs),a reasonable model is set up,taking all the possible factor (carrier delocalization,carrier leakage and Auger recombination) into account.By fitting the exteal quantum efficiency-injection current (η-Ⅰ) measurements of two LED samples,the validity of the model is demonstrated.The fit results show that the main origin of efficiency droop at a high injection current is carrier leakage.Furthermore it is also indicated that carrier delocalization plays an important role in the efficiency droop effect in those LEDs of large localization degree.InGaN-based multiple-quantum-well (MQW) blue light emitting diodes (LEDs) have been widely used,however the reduction of efficiency at high injection current is the bottleneck of LED blossom.This is the so-called efficiency droop effect,[1-3] the exteal quantum efficiency of the LED decreases dramatically when the injection current density is higher than 10 70 A/cm2.Many mechanisms,such as carrier leakage,[2,4,5] Auger recombination[6] and carrier delocalization under high injection current density,[1,7]have been proposed to explain this phenomenon.
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