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研究了以不同B2H6流量预淀积硼对UHV/CVD自组织生长Ge量子点尺寸分布的影响。在适当的生长条件下,得到了尺寸分布很窄的均匀Ge量子点,用AFM对量子点的形貌进行观察,Ge量子点尺寸的涨落小于±3%,量子点的水平尺寸和高度分别为60nm和10nm,密度为8×109cm-2。实验结果表明,通过预淀积硼表面处理,可以得到尺寸分布很窄的量子点,以满足量子点光电器件方面应用的要求。
The effect of boron pre-deposited at different flow rates of B2H6 on the size distribution of Ge quantum dots grown by UHV / CVD self-organization was investigated. Under appropriate growth conditions, a uniform Ge quantum dot with a narrow size distribution was obtained. The morphology of the quantum dots was observed by AFM. The fluctuation of the size of the Ge quantum dots was less than ± 3%. The horizontal size and height of the quantum dots were respectively 60 nm and 10 nm and a density of 8 × 10 9 cm -2. The experimental results show that by pre-deposition of boron surface treatment, quantum dots with narrow size distribution can be obtained to meet the application requirements of quantum dot optoelectronic devices.