论文部分内容阅读
利用阳离子表面活性剂(十六烷基三甲基溴化铵)胶束与硅源(正硅酸乙酯)的协同组装过程,通过改进的St?ber法制备具有放射状孔道的介孔氧化硅(Mesoporous silica,Sm)微球。结果表明:所得Sm微球粒径在260~480 nm范围,样品的BET比表面积为1 300~1 500 m2/g,其内部孔道孔径集中在2~3 nm。利用原子力显微镜比较了Sm磨料与常规实体氧化硅(Solid silica,Ss)磨料对热氧化硅片的抛光特征。经Sm磨料抛光后,衬底表面粗糙度均方根值RRMS为0.240 nm,表面微观轮廓起伏在±0.70 nm范围内,抛光材料去除率γMRR可达93 nm/min。与Ss磨料相比,Sm磨料有利于降低抛光衬底粗糙度,提高材料去除率,并有效避免出现微划痕等表层机械损伤。
Using the synergistic assembly of cationic surfactant (cetyltrimethylammonium bromide) micelles and silicon source (tetraethylorthosilicate), mesoporous silica with radial pores was prepared by modified St? Ber method (Mesoporous silica, Sm) microspheres. The results showed that the particle size of the obtained Sm microspheres was in the range of 260-480 nm. The BET specific surface area of the samples was in the range of 1 300 ~ 1 500 m2 / g, and the inner pore diameters of the samples concentrated in 2 ~ 3 nm. Atomic force microscopy was used to compare the polishing characteristics of thermal oxide wafers between Sm abrasive and conventional solid silica (Ss) abrasives. After Sm abrasive polishing, the root mean square roughness of the substrate RRMS is 0.240 nm, the surface micro-profile fluctuation is within ± 0.70 nm, and the polishing material removal rate γMRR can reach 93 nm / min. Compared with the Ss abrasive, Sm abrasive helps to reduce the roughness of the polished substrate, improve the material removal rate, and effectively prevent the appearance of micro-scratches and other mechanical damage on the surface.