美国Cree公司演示了一种用于移动WiMAX用途的新的高功率GaN RF功率晶体管。这种分立晶体管在40V电压下工作,3.3GHz下产生的峰值脉冲RF功率达到创记录的400W,相关功率增益10.6dB,漏效率62%。据悉,这是迄今公开报导的单管封装GaN晶体管在此频率下的最高输出功率。Cree推出400W S Cree, Inc., USA, demonstrates a new high-power GaN RF power transistor for mobile WiMAX use. This discrete transistor operates at 40V and produces a peak pulse RF power of 3.3W at a record 400W with a correlated power gain of 10.6dB and a drain efficiency of 62%. It is reported that this is so far publicly reported single-transistor GaN transistors at this maximum output power. Cree launches 400W S