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用磁控溅射方法制备了NiFeⅠ FeMn Bi NiFeⅡ 薄膜 ,研究了反铁磁薄膜FeMn与铁磁薄膜NiFeⅠ 及NiFeⅡ 间的交换偏置场Hex相对于分隔层Bi厚度的变化 .发现随分隔层Bi厚度的增加 ,FeMn与NiFeⅠ 间的交换偏置场Hex1 几乎不变 ,FeMn与NiFeⅡ 间的交换偏置场Hex2 急剧减小 .当Bi的厚度超过 0 6nm时 ,FeMn与NiFeⅡ 之间的交换偏置场从 6 92 5下降为 0 876kA·m- 1 .x射线光电子能谱 (XPS)分析表明 ,沉积在FeMn NiFeⅡ 界面的Bi并没有全部停留在界面处 ,至少有部分偏聚到NiFeⅡ 层表面
The NiFeⅠFeMn Bi NiFeⅡ thin films were prepared by magnetron sputtering and the change of the exchange bias field Hex between the FeMn antiferromagnetic thin films and the NiFeⅠ and NiFeⅡ ferroelectric thin films was compared with that of the spacer layer Bi.It was found that with the Bi thickness , The exchange bias field Hex1 between FeMn and NiFeⅠ hardly changed, and the exchange bias field Hex2 between FeMn and NiFeⅡ sharply decreased.When the thickness of Bi exceeds 0 6nm, the exchange bias field between FeMn and NiFeⅡ From 6 92 5 to 0 876 kA · m -1 X-ray photoelectron spectroscopy (XPS) analysis showed that Bi deposited on the FeMn NiFeⅡ interface did not all stay at the interface, at least some segregated to the surface of the NiFe layer