本文对四方晶系晶体的Bridgman法生长进行了稳态数值模拟。当熔体的导热系数位于晶体横向导热系数和纵向导热系数中间的一小段时,将产生“W”形固液界面。通过比较,指出不同导热系数组合时晶体生长的难易。当熔体的导热系数位于晶体横向导热系数和纵向导热系数中间的一小段时,界面平坦,容易长出较好质量的晶体。对中、低级晶系的生长,晶体横向导热系数应大于纵向导热系数。 In this paper, the steady-state numerical simulation of the Bridgman growth of tetragonal crystals is carried out. When the melt thermal conductivity is located in the crystal transverse thermal conductivity and longitudinal thermal conductivity in the middle of a short period, will produce a “W” solid-liquid interface. By comparison, it is pointed out that the crystal growth is difficult when the thermal conductivity is different. When the melt thermal conductivity is located in the crystal transverse thermal conductivity and longitudinal thermal conductivity in the middle of a short section, the interface is flat, easy to grow better quality crystals. For the growth of middle and lower crystal systems, the transverse thermal conductivity of the crystal should be greater than the longitudinal thermal conductivity.