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本届会议在美国纽约市召开,为期三天,共提交91篇报告,它们反映了近一年来在固体电路方面取得的新成绩。现分几个部分概述于下: 一、超大规模集成技术 会议特邀斯坦福大学梅特尔教授作了“超大规模集成技术极限”的报告。他指出了五个限制因素。 (1)基本因素:从热力学原理导出数字系统中每一次开关瞬变所需要的能量至少为E_s,E_s=4KT=1.65×10~(-20)焦耳。 (2)材料因素:在硅材料中,一个电子通过电信号ΔV=1V)所需要的渡越时
This session was held in New York City, United States for a period of three days. A total of 91 reports were submitted reflecting the new achievements in solid-state circuits in the past year. Now divided into several sections in the following: First, the large-scale integrated technology conference Invited Stanford University professor Mei Teer made a “large-scale integrated technology limit” report. He pointed to five constraints. (1) Basic factors: The energy required to derive each switching transient in the digital system from the thermodynamic principle is at least E_s, E_s = 4KT = 1.65 × 10 ~ (-20) Joules. (2) material factor: in silicon material, an electron through the electrical signal ΔV = 1V) the required transit time