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分别研究了FN隧穿应力和热空穴 (HH)应力导致的薄栅氧化层漏电流瞬态特性 .在这两种应力条件下 ,应力导致的漏电流 (SILC)与时间的关系均服从幂函数关系 ,但是二者的幂指数不同 .热空穴应力导致的漏电流中 ,幂指数明显偏离 - 1,热空穴应力导致的漏电流具有更加显著的瞬态特性 .研究结果表明 :热空穴SILC机制是由于氧化层空穴的退陷阱效应和正电荷辅助遂穿中心的湮没 .利用热电子注入技术 ,正电荷辅助隧穿电流可被大大地减弱 .
The transient characteristics of the thin gate oxide leakage current caused by FN tunneling stress and hot hole (HH) stress were investigated respectively. Under both stress conditions, the stress-induced leakage current (SILC) Function, but the exponents of the two are different.The leakage current caused by hot hole stress has a power exponent deviating significantly from -1, and the leakage current caused by hot hole stress has more significant transient characteristics.The results show that hot air void The hole SILC mechanism is due to the recessive trap effect of oxide holes and the annihilation of the positively charged tunneling center. By using the hot electron injection technique, the positive charge assisted tunneling current can be greatly reduced.