采用含异丙醇(IPA)的TMAH溶液腐蚀经Si_3N_4掩膜形成10μm×10μm窗口的单晶硅片。在硅片表面得到了内壁光滑的倒金字塔V型口阵列.研究发现:与纯TMAH对硅的各向异性腐蚀特性相比,添加IPA使TMAH溶液对硅各个晶面的腐蚀速率减小,致使含IPA的TMAH溶液对硅的腐蚀速率和各向异性因子比在纯TMAH中要小,通常认为,腐蚀形成的倒金字塔结构侧壁晶面为(111)面,但本研究表明,由各向异性腐蚀形成倒金字塔的侧壁晶面随腐蚀时间发生了一系列转化。在腐蚀开始时,倒金字塔侧面由(567)面逐渐向(111)面转化;继续腐蚀时,腐蚀面偏离(111)面,向(443)面转化。 A monocrystalline silicon wafer with 10μm × 10μm window formed by Si_3N_4 mask was etched by using TMAH solution containing isopropanol (IPA). On the surface of the silicon wafer, an inverted pyramid V-shaped array with inner wall was obtained.It was found that the addition of IPA reduced the corrosion rate of the TMAH solution to all crystal planes of silicon compared with pure TMAH for anisotropic corrosion of silicon, The corrosion rate and anisotropy factor of silicon in TMAH solution containing IPA is smaller than that in pure TMAH. It is generally considered that the sidewall surface of the inverted pyramid structure formed by corrosion is the (111) plane. However, in this study, Heterosexual corrosion The pyramidal sidewalls of the inverted pyramids undergo a series of transformations with erosion time. At the beginning of the corrosion, the side of inverted pyramid gradually transformed from (567) to (111); when corrosion continued, the corrosion surface deviated from (111) surface and transformed to (443).