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为了进一步改善Si/SiC异质结光电二极管的性能,采用类似掺杂超晶格的结构,将Si层由多个具有量子尺寸的p型薄层和n型薄层周期性地叠合而成,在Si层中形成一系列不同层的电子势阱和空穴势阱,以延迟光生载流子的复合,延长光生载流子的复合寿命,达到提高光电流密度的目的。使用Silvaco软件模拟了这种Si/SiC异质结的特性,研究了不同的Si层结构参数对器件光电特性的影响,并对Si层的厚度及掺杂浓度进行了优化。研究表明,在0.6 W/cm2的卤钨灯辐照条件下,从SiC侧入射,p-Si和n-Si层的掺杂浓度均为1018 cm-3,厚度均为10 nm,器件的光电流密度可达129.6 mA/cm2,与常规结构相比,其最大光电流密度提高了21%,表明将Si/SiC异质结的Si层做成调制掺杂结构对器件光电性能有显著的改善作用。
In order to further improve the performance of the Si / SiC heterojunction photodiode, a similar doping superlattice structure is adopted, and the Si layer is formed by periodically stacking a plurality of p-type and n-type thin layers with quantum size , A series of electron potential wells and hole potential wells of different layers are formed in the Si layer to retard the recombination of photogenerated carriers and extend the recombination lifetime of photogenerated carriers to achieve the purpose of improving the photocurrent density. Silvaco software was used to simulate the characteristics of this Si / SiC heterojunction. The influence of different Si layer structure parameters on the photoelectric properties was studied. The thickness and doping concentration of Si layer were also optimized. The results show that the doping concentration of p-Si and n-Si layers is 1018 cm-3 and the thickness is 10 nm under the irradiation of 0.6 W / cm2 tungsten halogen lamp. The current density is up to 129.6 mA / cm2. Compared with the conventional structure, the maximum photocurrent density is increased by 21%. This shows that the Si / SiC heterojunction Si layer can be modulated into a doped structure to significantly improve the optoelectronic properties of the device effect.