毫米波频段已经成为AlGaN/GaN HEMT研究的一个发展趋势。利用器件仿真软件TCAD,对AlGaN/GaN HEMT交流特性进行了研究。从势垒层的Al组分和厚度两个参数分析了器件特征频率变化趋势。用TCAD仿真得到的AlGaN/GaN HEMT器件本征S参数,在ADS中添加器件的非本征参数,得到器件仿真的频率特性。在器件设计的基础上,进行了器件版图设计和流片,并测量了器件频率特性。测试和仿真结果的对比表明两者较为一致,表明器件仿真的有效性和指导意义。 Millimeter-wave frequency band has become a research trend of AlGaN / GaN HEMT. Using the device simulation software TCAD, the AC characteristics of AlGaN / GaN HEMT were studied. From the Al layer of the barrier layer and the thickness of the two parameters analysis of the characteristics of device frequency trends. The intrinsic S parameters of AlGaN / GaN HEMT devices were obtained by TCAD simulation, and the extrinsic parameters of the devices were added into ADS to get the frequency characteristics of the device simulation. Based on the device design, the device layout design and flow sheeting were performed and the device frequency characteristics were measured. The comparison between test results and simulation results shows that the two are more consistent, indicating the effectiveness and guiding significance of device simulation.