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在常规SiGe工艺下,设计了太赫兹频段的180 GHz信号产生、调制与探测电路。正交振荡器产生了四路相位相差90°的正弦信号,每路频率为45 GHz,线性叠加之后频率可达到180 GHz,开关交叉耦合结构在提高振荡器频率的同时,改善了振荡器的相位噪声;采用控制差分尾管电流的跨导切换式的调制方式,对180 GHz信号进行了10 MHz的幅度调制,输出功率为-27 dBm;探测电路主要为肖特基势垒二极管直接检波电路,实现对已调制的180 GHz信号解调。采用IBM 180 nm SiGe BiCMOS工艺进行流片验证,芯片面积为1 000μm×450μm,测试结果表明探测器能够成功解调太赫兹信号。
In the conventional SiGe process, the design of the terahertz band 180 GHz signal generation, modulation and detection circuit. Orthogonal oscillators produce four sinusoidal signals 90 ° out of phase with a frequency of 45 GHz each and a frequency of up to 180 GHz after linear superposition. Switching cross-coupled structures improve the oscillator’s phase while increasing the oscillator frequency Noise. The transconductance switched mode is used to control the differential tail current. The 180 GHz signal is amplitude-modulated at 10 MHz with an output power of -27 dBm. The detection circuit is mainly the Schottky barrier diode direct detection circuit, Demodulation of the modulated 180 GHz signal is achieved. Using 180nm SiGe BiCMOS process of IBM chip flow verification, the chip area of 1 000μm × 450μm, the test results show that the detector can successfully demodulate terahertz signals.