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基区重掺杂使HBT 突变结界面势垒形状及高度发生了扰动,这种扰动对电流输运特性有重要的影响。本文基于热场发射- 扩散模型,分析了基区重掺杂突变InP/InGaAs HBT 中的电流传输特性,并同实验测试数据进行了比较。结果表明:为了精确地描述电流传输特性,基区重掺杂情况下,必须考虑突变结界面势垒形状及高度扰动所引起的电流变化。
The heavy doping of the base region disturbed the shape and height of the interface barrier of the HBT mutant junction. This perturbation has an important influence on the current transport characteristics. Based on the thermal field emission-diffusion model, the current transfer characteristics in heavily doped abrupt InP / InGaAs HBTs are analyzed and compared with the experimental data. The results show that in order to accurately describe the current transfer characteristics, the basal area heavily doped, we must take into account the shape of the interface of the mutant junction interface and the height of the current disturbance caused by the change.