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The interfacial and electrical properties of high-k LaTaON gate dielectric Ge metal-oxide-semiconductor (MOS)capacitors with different tantalum (Ta) contents are investigated.Experimental results show that the Ge MOS capacitors with a Ta content of ～30％ exhibit the best interfacial and electrical properties,including low interfacestate density (7.6 × 1011 cm-2 eV-1),small gate-leakage current (8.32 × 10-5 A /cm2) and large equivalent permittivity (22.46).The x-ray photoelectron spectroscopy results confirm that the least GeOx is formed at the Ge surface for the sample with a Ta content of ～30％ due to the effective blocking role of Ta against O diffusion and the greatly improved hygroscopicity of LaON.