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对目前基于软错误屏蔽、施密特触发及双互锁单元结构的几种单粒子翻转加固锁存器进行分析,并从面积、延时、功耗和抗单粒子翻转能力等方面进行综合比较。着重剖析了DICE结构的多节点翻转特性,研究了敏感节点隔离对抗单粒子翻转能力的影响,设计了测试芯片,并进行了辐照试验验证。辐照试验结果表明,相比于其他加固锁存器结构,DICE结构的单粒子翻转阈值最高,翻转截面最低,功耗延时积最小。当敏感节点隔离间距由0.21μm增大到2μm时,DICE结构的单粒子翻转阈值增大157%,翻转截面减小40%,面积增大1倍。在DICE结构中使用敏感节点隔离可有效提高抗单粒子翻转能力,但在具体的设计加固中,需要在抗辐照能力、面积、延时和功耗之间进行折中考虑。
Based on the analysis of several single-chip flip-up latches based on soft-error mask, Schmitt-triggered and double-interlocked cell structures, and comprehensive comparison of area, delay, power consumption and anti-single- . The multi-node flip characteristic of DICE structure is analyzed emphatically. The influence of isolation of sensitive nodes against single-particle flip-flop capability is studied. The test chip is designed and verified by irradiation test. The results of the irradiation experiments show that the DICE structure has the highest single event flip threshold, the lowest flip section, and the lowest power delay product, compared with other reinforced latch structures. When the isolation distance of sensitive nodes is increased from 0.21μm to 2μm, the single-particle inversion threshold of DICE structure increases by 157% and the reversal section decreases by 40% and the area increases by 1 times. The use of sensitive node isolation in DICE structures improves the resistance to single-particle flipping, but compromises the ability to withstand radiation, area, delay, and power consumption in specific design reinforcements.