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  5. ,Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure

,Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure

来源 :中国物理B（英文版） | 被引量 : 0次 | 上传用户：llllljjjjjxxxxx
【摘 要】
：
The green light emitting diodes (LEDs) have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum.In this research,a novel
【作 者】
：
Yangfeng Li Yang Jiang Junhui Die Caiwei Wang Shen Yan Ziguang Ma Haiyan Wu Lu Wang Haiqiang Jia Wenxin Wang Hong Chen 
【机 构】
：
Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Be
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2017年8期
【关键词】
：
InGaN novel quantum wells light-emitting diodes electroluminescence 
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The green light emitting diodes (LEDs) have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum.In this research,a novel quantum well structure was designed to improve the electroluminescence (EL) of green InGaN-based LEDs.Compared with the conventional quantum well structure,the novel structure LED gained 2.14 times light out power (LOP) at 20-mA current injection,narrower FWHM and lower blue-shift at different current injection conditions.
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