由于与硅集成电路工艺兼容的张应变锗薄膜在光电器件如光电探测器、调制器,特别是发光器件中具有潜在的应用前景,使其得到了广泛关注。然而,在锗薄膜中引入可控的、大的张应变是个挑战。综述了张应变锗薄膜制备技术的研究进展,重点介绍了在锗薄膜中引入张应变的外延技术、应变转移技术、应变浓缩技术和机械应变技术的工艺流程和实验结果,并讨论了它们的优点和缺点。采用应变浓缩技术制备的厚度为350 nm的锗薄膜微桥的单轴张应变和微盘的双轴张应变分别达到了4.9%和1.9%,可将锗调制为直接带隙材料,适用于锗激光器的研制。 The tensile strain germanium films, which are compatible with the silicon integrated circuits, have attracted a great deal of attention due to their potential applications in optoelectronic devices such as photodetectors, modulators and especially light-emitting devices. However, the introduction of a controlled, large tensile strain into the germanium film is a challenge. The research progress on the preparation of tensile strain germanium thin films is reviewed. The process flow and experimental results of the introduction of tensile strain, the strain transfer technique, the strain concentration technique and the mechanical strain technique in germanium thin films are emphatically introduced, and their advantages are discussed And shortcomings. Germanium thin film microbridges with thickness of 350 nm prepared by strain concentration technique have uniaxial tensile strain and biaxial tensile strain of 4.9% and 1.9% respectively, which can be used to modulate germanium into direct band gap materials for germanium laser Development.