论文部分内容阅读
对1 Mbits的静态随机存储器(SRAM)进行了总剂量辐照及退火试验,试验结果表明:静、动态功耗电流均随总剂量增加而显著增大;静态功耗电流的退化与功能失效有密切相关性,非常适合作为辐射环境下器件功能失效的预警量;SRAM的读写出错数存在辐射剂量阈值,超过阈值时出错数便会指数增加;退火过程可以使器件参数恢复到初始值附近,其中高温退火对出错数的恢复作用更加明显。
The total dose of 1 Mbits static random access memory (SRAM) radiation and annealing test results show that: static and dynamic power consumption current increases with the total dose increased significantly; static power current degradation and functional failure of Close correlation is very suitable as a warning device failure function in the radiation environment; SRAM read and write errors exist radiation dose threshold above which the number of errors will increase exponentially; annealing process can make the device parameters back to near the initial value, Among them, the effect of high temperature annealing on the recovery of the number of errors is more obvious.