论文部分内容阅读
双极型 RAM 也和 MOS RAM 一样,以急剧的速度向高速和大容量方向发展。我们研制成的1024单元双极型 RAM 是最新产品,读出的取数时间已达到25 ns。输出采用标准的TTL 电平,只用一个标准+5V 电源,功耗平均为500 mW,这种存储器具有很好的通用性。这样高速度大容量的存储器是怎样研制成的呢?下面以设计上的考虑为主介绍这个1 KRAM。要想使半导体存储器容量大,仅仅过分地增大芯片尺寸,由于成品率差,是得不到合格产品的,所以除了不断减小芯片上每个单元占有面积外是没有其它办法的。对于双极型存储器,由于提高了集成度,通常相应地减少了杂散电
Bipolar RAM, like MOS RAM, is also growing at a steep speed toward high speed and high capacity. We have developed a 1024 unit bipolar RAM is the latest product, read access time has reached 25 ns. The output uses a standard TTL level, using only a standard +5 V power supply, the average power consumption of 500 mW, this memory has good versatility. This high-speed large-capacity memory is how to develop it? The following design considerations to introduce the 1 KRAM. In order to make the semiconductor memory capacity large, the size of the chip is merely increased excessively, the qualified product is not obtained due to the poor yield, so there is no other way than to continuously reduce the area occupied by each cell in the chip. For bipolar memories, stray currents are usually reduced accordingly due to increased integration