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本文提出一种高k介质电导增强SOI LDMOS新结构(HK CE SOI LDMOS),并研究其机理.HK CE SOI LDMOS的特征是在漂移区两侧引入高k介质,反向阻断时,高k介质对漂移区进行自适应辅助耗尽,实现漂移区三维RESURF效应并调制电场,因而提高器件耐压和漂移区浓度并降低导通电阻.借助三维仿真研究耐压、比导通电阻与器件结构参数之间的关系.结果表明,HK CE SOI LDMOS与常规超结SOI LDMOS相比,耐压提高16%—18%,同时比导通电阻降低13%—20%,且缓解了由衬底辅助耗尽效应带来的电荷非平衡问题.
In this paper, a novel high-k dielectric conductivity-enhanced SOI LDMOS (HK CE SOI LDMOS) is proposed and its mechanism is studied.HK CE SOI LDMOS is characterized by introducing high-k medium on both sides of the drift region, The medium can adaptively drain the drift region to achieve the three-dimensional RESURF effect in the drift region and modulate the electric field so as to increase the device withstand voltage and drift region concentration and reduce the on-resistance. By means of three-dimensional simulation, the breakdown voltage, specific on-resistance and device structure The results show that the HK CE SOI LDMOS has a higher breakdown voltage of 16% -18% than the conventional super-junction SOI LDMOS and a 13% -20% improvement over the on-resistance, Charge depletion caused by the imbalance of the problem.