集成电路技术在近 10年里有了飞速的发展 ,加工工艺从 0 .5μm ,0 .6μm亚微米级工艺发展到 0 .2 5μm ,0 .18μm甚至 0 .1μm的深亚微米 (DSM)和超深亚微米级工艺 (VDSM) .单芯片集成度大大提高 ,加上集成电路设计的多年积累 ,单个芯片有能力实现复杂系统 ,这就是单片系统 (system on a chip) .在单芯片上实现复杂系统不是简单地将过去的设计在同一芯片上简单的集成 ,需要考虑许多新的技术问题 .将介绍单片系统的设计特点以及涉及单片系统设计的关键技术 ,其中包括设计复用技术、使用 IP核的注意事项以及端口标准化等问题 ;深亚微米设计的设计要点和难点 :深亚微米电路的电学模型以及连线延迟计算方法和避免传输线效应的方法 ;同时还将介绍单片系统的测试技术和一些测试方案 ,物理综合概念和目前流行的能提供深亚微米设计能力的主流 EDA工具 In recent 10 years, the integrated circuit technology has been developing rapidly. The processing technology has been developed from submicron processes of 0.5μm and 0.6μm to deep submicron (DSM) of 0.25μm, 0.18μm and even 0.1μm Ultra-deep sub-micron process (VDSM). Significantly increased single-chip integration, coupled with years of integrated circuit design, a single chip capable of complex systems, which is the system on a chip (system on a chip) Implementing Complex Systems Instead of simply integrating past designs on the same chip, many new technical issues need to be considered. The design features of single-chip systems and key technologies involved in designing monolithic systems are described, including design reuse techniques , Precautions for using IP cores, and port standardization. Design points and difficulties in deep-submicron design: Electrical models of deep-submicron circuits, methods of calculating connection delay and ways of avoiding transmission line effects, and introduction of single-chip systems Testing techniques and test solutions, physical synthesis concepts and the popular EDA tools that provide deep sub-micron design capabilities