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B I1-XSBX半导体合金是性能优异的热电和磁电功能材料,为制备固态电制冷器件、温差发电器件和磁电器件的重要材料。电化学沉积薄膜技术工艺设备简单成本低,在半导体薄膜制备方面有很好的应用前景。系统研究了高浓度盐酸(2.4 MOL/L)的B I和SB盐酸溶液,成份从纯铋逐步变化到纯锑的B I1-XSBX合金半导体薄膜电化学沉积特性。测试了沉积过程I-V循环曲线和和沉积电荷效率等电化学参数。结果表明在所有成份范围内都可以得到典型的B I1-XSBX固溶体结构的高质量薄膜。薄膜生长为典型的溶液扩散控制过程,具有高的沉积电荷效率。薄膜沉积和溶解之间的电位差随溶液中SB(Ⅲ)离子浓度增加而增大,生长的薄膜越来越稳定。在30%SB浓度附近,电化学过程、薄膜结构和性能发生明显的突变。应用X射线衍射和电子显微镜研究薄膜结构,发现薄膜具有明显的(012)择优取向,薄膜晶粒尺寸也随SB浓度的增加而变化。
B I1-XSBX semiconductor alloy is excellent performance of thermoelectric and magnetoelectric functional materials, for the preparation of solid-state electrical refrigeration devices, thermoelectric power generation devices and magneto-electrical materials important materials. Electrochemical deposition film technology process equipment is simple and low cost, has good application prospects in the preparation of semiconductor films. The electrochemical deposition characteristics of B I1-XSBX alloy semiconductor films, which were changed from pure bismuth to pure antimony, were systematically investigated in high concentration hydrochloric acid (2.4 MOL / L) B I and SB hydrochloric acid solutions. The electrochemical parameters such as I-V cycle and deposition charge efficiency were tested. The results show that a high quality film of a typical B I1-XSBX solid solution structure can be obtained in all composition ranges. Thin film growth is a typical solution diffusion control process with high deposition charge efficiency. The potential difference between film deposition and dissolution increases with increasing concentration of SB (Ⅲ) ions in the solution, and the growing film becomes more and more stable. In the vicinity of 30% SB concentration, the electrochemical process, membrane structure and properties of significant changes. The films were characterized by X-ray diffraction (XRD) and electron microscopy (SEM). It was found that the film had a preferential orientation of (012) and the grain size of the film also changed with the increase of SB concentration.