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分析了外界惯性冲击对低真空封装的旁路电容式RF MEMS开关性能的影响.得到了近似计算外界惯性冲击引起位移的解析式.在已知最大容许插入损耗和外部惯性冲击环境条件下,MEMS开关支撑梁的最小机械刚度常数以及外部惯性冲击引起的插入损耗可以根据该式得到.通过RF MEMS电容式开关实例,表明设计低真空封装的RF MEMS电容式开关时应考虑外部环境因素.可见,RF MEMS开关用低真空封装可以减小空气阻尼、改善开关速度和执行电压的同时,开关的性能却容易受外界环境因素的影响.该研究对低真空封装的RF MEMS电容式开关的优化设计很有意义.
The influence of external inertial impact on the bypass capacitor RF MEMS switch performance in low vacuum packaging is analyzed and the analytic formula to approximate the displacement caused by external inertial impact is obtained.Under the known maximum allowable insertion loss and external inertial impact environment, The minimum mechanical stiffness constant of the switch support beam and the insertion loss due to external inertial impact can be obtained from this equation.The RF MEMS capacitive switch example shows that the external environmental factors should be considered when designing the RF MEMS capacitive switch with low vacuum package, RF MEMS switch with low vacuum packaging can reduce the air damping, improve the switching speed and the implementation of the voltage, while the performance of the switch is vulnerable to external environmental factors.The study of the low vacuum packaging RF MEMS capacitive switch design is very optimistic Significant.