对激光辐照PV型的Hg1-xCdxTe单元探测器的响应特性进行了研究,建立了材料内部光生电动势变化的数学分析模型。计算了不同光源辐照3类组分不同的Hg1-xCdxTe探测单元的输出特性,并对温度波动影响进行了分析。结果表明:在光敏面积恒定时,x值越大探测器的完全饱和电压越大,即探测器的响应度Hg0.627Cd0.373Te>Hg0.698Cd0.302Te>Hg0.819Cd0.181Te;x值越小,探测器受温度波动的影响越小。 The response characteristics of the Hg1-xCdxTe unit detector irradiated by laser were studied, and the mathematical model of the change of photogenerated electromotive force in the material was established. The output characteristics of Hg1-xCdxTe detection units with different types of components irradiated by different light sources were calculated and the influence of temperature fluctuation was analyzed. The results show that when the photosensitive area is constant, the greater the value of x, the greater the saturation voltage of the detector, that is, the responsivity of the detector Hg0.627Cd0.373Te> Hg0.698Cd0.302Te> Hg0.898Cd0.302Te> Hg0.819Cd0.181Te; the smaller the value of x is , The detector is less affected by temperature fluctuations.