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高性能射频组件以及复合半导体技术设计和制造领域的全球领导者RFMicro Devices日前宣布,扩展其RFMD业界领先的氮化镓工艺技术,包括功率转换应用中专为高电压功率器件而优化的新技术。RFMD推出的最新氮化镓工艺技术一rGaN-HV~(TM)-可在功率转换应用(1至50KW)中大幅度降低系统成本和能量消耗。RFMD推出的rGaN-HV~(TM)技术可为器件实现高达900伏特的击穿电压,具有高峰值电流功能并可在氮化镓电
RFMicro Devices, a global leader in the design and manufacture of high-performance radio frequency components and composite semiconductor technologies, today announced the expansion of its RFMD industry-leading GaN process technology, including new technology optimized for high-voltage power devices in power conversion applications. RFGaD’s latest gallium nitride technology, rGaN-HV ™, dramatically reduces system cost and energy consumption in power conversion applications (1 to 50 kW). RFMD’s rGaN-HV ~ (TM) technology delivers breakdown voltages up to 900 volts for devices with high peak current capability and is available in gallium nitride