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研究了栅长为1微米的硅肖特基势垒场效应晶体管的微波特性。对管子从0.1千兆赫到12千兆赫的散射参数进行了测量。从测量出的数据确定了包括本征晶体管和外部元件的等效电路。本征晶体管的某些参数,尤其是跨导,受饱和漂移速度的强烈影响。采用高掺杂和窄沟道时,本征晶体管的性能最好。所测的功率增益与等效电路的理论值极为接近。最好器件的最高振荡频率f_max为12千兆赫。从研究中看出,尤其是栅金属化电阻和栅电极接触柄寄生等外部元件,使功率增益显著降低。不然,最高振荡频率f_max可望达到20千兆赫。
The microwave characteristics of a Schottky barrier field effect transistor with a gate length of 1 μm were investigated. The scattering parameters of the tube from 0.1 gigahertz to 12 gigahertz were measured. From the measured data, the equivalent circuit including the intrinsic transistor and external components is determined. Some parameters of the intrinsic transistor, especially transconductance, are strongly influenced by the saturation drift speed. Intrinsic Transistor performance is best when using highly doped and narrow channels. The measured power gain is very close to the theoretical value of the equivalent circuit. The best device has a maximum oscillation frequency f_max of 12 GHz. From the study, it can be seen that the power gain is remarkably reduced by the external components such as the gate metalized resistor and the gate electrode in contact with the handle. Otherwise, the maximum oscillation frequency f_max is expected to reach 20 GHz.