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采用有源忆阻器构建了三阶忆阻振荡电路单元。将该忆阻振荡电路单元作为构建忆阻非线性网络的元胞,通过与周围邻近元胞的耦合,实现了具有反应扩散特性的非线性忆阻电路网络。通过MATLAB实验仿真观察到了该网络产生的图灵斑图。进一步研究了忆阻元胞参数(α,β)和扩散系数(D_(11),D_(12),D_(21),D_(22))对图灵斑图形成的影响。通过对不同参数的仿真,发现忆阻元胞参数影响斑图中斑点密度,而扩散系数影响斑图的形状。研究结果可为忆阻器实现在图像处理和模式识别方面的应用提供重要的理论依据。
A three-stage memristive oscillation circuit unit is constructed by using an active memristor. The memristive-oscillating circuit unit is used as a cell for constructing a memristive non-linear network, and a non-linear memristor network with reactive diffusion characteristics is realized by coupling with nearby neighboring cells. Through MATLAB experimental simulation, the Turing pattern of the network was observed. The effects of cell parameters (α, β) and diffusion coefficients (D_ (11), D_ (12), D_ (21) and D_ (22)) on the formation of TURP were further studied. Through the simulation of different parameters, it is found that the parameters of memristor cell affect the spot density in the patch, while the diffusion coefficient affects the shape of the patch. The results provide important theoretical basis for the application of memristor in image processing and pattern recognition.