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采用 Co/C/Si多层薄膜结构的中间层诱导固相外延方法在 Si(10 0 )上制备外延 Co Si2 薄膜 .用四探针电阻仪、XRD、AES、RBS等分析手段对该结构固相反应形成的薄膜的电学特性、组分、晶体结构等进行了表征 .结果表明 ,Co/C/Si多层结构经快速热退火 ,可以在 Si(10 0 )衬底上得到导电性能和高温稳定性良好的 Co Si2 薄膜 .C层的加入阻碍了 Co和 Si的互扩散和互反应 ,从而促进了 Co Si2 在硅衬底上的外延 .
An epitaxial Co Si2 thin film was deposited on Si (100) using a Co / C / Si multi-layer thin-film intermediate-layer induced solid-state epitaxy method. The structure of the thin film was characterized by four-probe resistance, XRD, AES and RBS. The results show that the Co / C / Si multilayered structure can be rapidly annealed on Si (100) substrate to obtain the conductivity and high temperature Good stability of the Co Si2 film.C layer addition hindered the interdiffusion and mutual reaction of Co and Si, thus promoting the Co Si2 epitaxial on the silicon substrate.