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利用无机非晶SiO2与有机聚合物PPV复合制备了异质结器件,研究了不同层之间由于能级匹配而产生的势垒对整个器件的光电性能的影响。对于单层有机器件ITO/PPV/Al及双层有机无机复合器件ITO/PPV/SiO2/Al,空穴的注入取决于ITO/PPV界面的势垒,空穴是多数载流子,发光强度主要取决于电子的注入。单层器件电子的注入能力与PPV/Al界面的势垒有关;双层器件由于引进SiO2层,提高了电子的注入能力,其发光强度和发光效率较单层器件都有改善。对于3层有机-无机复合器件ITO/SiO2/PPV/SiO2/Al,在两个方向上电子注入的势垒不同,电子的注入能力有所差别,交流激发时,当Al电极为负(ITO为正)时,器件的最大瞬时发光强度是当ITO电极为负(Al为正)时最大瞬时发光强度的1.3倍。
Heterojunction devices were fabricated by compounding inorganic amorphous SiO2 and organic polymer PPV. The influence of potential barrier between different layers on the photoelectric properties of the device was studied. For single-layer organic devices ITO / PPV / Al and double-layer organic-inorganic composite devices ITO / PPV / SiO2 / Al, hole injection depends on the barrier of ITO / PPV interface, holes are majority carriers, Depends on the injection of electrons. The electron injection capability of the single-layer device is related to the potential barrier of the PPV / Al interface. The introduction of the SiO2 layer in the dual-layer device enhances the electron injection capability and improves the light emission intensity and the luminous efficiency compared with the single layer device. For the three-layer organic-inorganic hybrid device ITO / SiO2 / PPV / SiO2 / Al, the potential barrier of electron injection is different in both directions and the electron injection ability is different. When AC excitation is applied, when the Al electrode is negative Positive), the maximum instantaneous luminous intensity of the device is 1.3 times the maximum instantaneous luminous intensity when the ITO electrode is negative (Al is positive).