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1 引言新的功率半导体封装技术已经发展为:功率半导体芯片焊接在DCB陶瓷基板上,同时多达5个引脚的框架与基板是一体的。这种封装方法将模块与分离器件的装配技术结合,因此这种器件具有两种器件的特性。新的器件与散热器内部绝缘。管脚焊接在印制板上;任何多引脚的电路都可以使用这种封装,可以使用各种芯片,例如MOSFET、IGBT、晶闸管、二极管,还适用于各种拓扑。引出管脚可以根据电路设计的需要定义(例如避免电流环),同时具有紧凑的封装体积,有利于功率部分低感性设计。并联这些设备有利于设计宽功率范围的电源部分。可靠性可与模块相媲美,
1 INTRODUCTION The new power semiconductor packaging technology has evolved to: Power semiconductor chips are soldered on DCB ceramic substrates while up to 5-pin frames are integrated with the substrate. This encapsulation method combines the module with the assembly technique of the separate device so that the device has the characteristics of both devices. The new device is insulated from the heat sink. The pins are soldered on the board; any multi-pin circuit can be used in this package, using a variety of chips such as MOSFETs, IGBTs, thyristors, diodes, and a wide range of topologies. The pinout can be defined according to the needs of the circuit design (eg, avoiding current loops) while having a compact package size that facilitates low inductive design of the power section. The parallel connection of these devices facilitates the design of the power section of a wide power range. Reliability comparable with the module,