Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

来源 :Chinese Physics B | 被引量 : 0次 | 上传用户:jianweify
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A transmission-mode GaAs photocathode includes four layers of glass,Si 3 N 4 ,Ga 1x Al x As and GaAs. A gradient-doping photocathode sample was obtained by molecular beam epitaxy and its transmittance was measured by spec-trophotometer from 600 nm to 1100 nm. The theoretical transmittance is derived and simulated based on the matrix formula for thin film optics. The simulation results indicate the influence of the transition layers and the three thin-film layers except glass on the transmittance spectra. In addition,a fitting coefficient needed for error modification enters into the fitted formula. The fitting results show that the relative error in the full spectrum reduces from 19.51% to 4.35% after the formula is modified. The coefficient and the thicknesses are gained corresponding to the minimum relative error,meanwhile each layer and total thin-film thickness deviation in the module can be controlled within 7%. The presence of glass layer roughness,layer interface effects and surface oxides is interpreted on the modification. A transmission-mode GaAs photocathode includes four layers of glass, Si 3 N 4, Ga 1x Al x As and GaAs. A gradient-doping photocathode sample was obtained by molecular beam epitaxy and its transmittance was measured by spec-trophotometer from 600 nm to 1100 nm. The theoretical transmittance is derived and simulated based on the matrix formula for thin film optics. The simulation results indicate the influence of the transition layers and the three thin-film layers except glass on the transmittance spectra. needed for error modification enters into the fitted formula. The fitting results show that the relative error in the full spectrum reduces from 19.51% to 4.35% after the formula is modified. The coefficient and the thicknesses are adjusted accordingly to the minimum relative error, meanwhile each layer and total thin-film thickness deviation in the module can be controlled within 7%. The presence of glass layer roughness, layer interface effects and sur face oxides is interpreted on the modification.
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