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为降低TDDI产品Lead Open型线不良发生率,本文对Lead Open的发生机理进行了研究及改善验证。对TDDI产品生产数据进行了对比,对Mo-Al-Mo结构的SD膜层进行研究,根据以上结果确定改善方案并投入验证。首先,明确了Lead Open发生率与Delay Time的关系。接着,对SD膜层的微观结构进行了表征。然后,根据膜层结构和不同金属的电化学特征,建立了SD膜层电偶腐蚀模型。分析表明:Mo、Al两种金属间存在1.47V的电极电位差,具有很强的电偶腐蚀倾向性,且表层Mo中存在10nm级别的贯穿性孔洞,直径为0.4nm的水分子可轻易渗入,进而引发电偶腐蚀。表层Mo厚度增加25%后,其腐蚀速度较量产条件降低30%,Lead Open发生率降低1.4个百分点,维持在0.1%的较低水平,满足TDDI产品量产对该类不良发生率的要求。
In order to reduce the incidence of Lead Open line defects in TDDI products, this paper studies the mechanism of Lead Open and improves the verification. The production data of TDDI products are compared, and the SD film of Mo-Al-Mo structure is studied. Based on the above results, the improvement scheme is confirmed and verified. First, the relationship between Lead Open incidence and Delay Time is clarified. Then, the microstructure of SD film was characterized. Then, based on the film structure and the electrochemical characteristics of different metals, a galvanic corrosion model of SD film was established. The results show that there is an electrode potential difference of 1.47V between Mo and Al, which has a strong tendency of galvanic corrosion. In the Mo layer, there exists a 10nm-level penetrating hole. Water molecules with a diameter of 0.4nm can easily penetrate , Which in turn leads to galvanic corrosion. When the surface Mo thickness is increased by 25%, the corrosion rate is reduced by 30% compared with the production condition, the Lead Open incidence is reduced by 1.4%, maintained at a relatively low level of 0.1%, and the TDDI product mass production meets the requirement of such adverse incidence .