分析了引起大面阵内线转移CCD直流短路的原因,确认了二次金属铝刻蚀残留是引起器件失效的主要原因。利用扫描电子显微镜技术,研究了刻蚀工艺参数对内线转移CCD二次金属铝刻蚀残留的影响。优化了预刻蚀、主刻蚀和过刻蚀三个阶段的工艺条件,消除了金属铝刻蚀残留。采用优化的工艺参数进行二次金属铝刻蚀,器件直流成品率提高了30%。 The cause of DC short-circuit caused by line transfer in large area array is analyzed, and it is confirmed that the secondary metal aluminum etching residue is the main reason causing the device failure. Using scanning electron microscopy, the influence of etching process parameters on the etching residue of the secondary metal aluminum in the transfer CCD was studied. Optimized pre-etching, the main etching and over etching three stages of the process conditions, eliminating the metal aluminum etching residue. Using the optimized process parameters for secondary metal aluminum etching, the device DC yield increased by 30%.