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According to Lambert’s law,a novel structure of photodetectors,namely photodetectors in siliconon-insulator,is proposed.By choosing a certain thickness value for the SOI layer,the photodetector can absorb blue/violet light effectively and affect the responsivity of the long wavelength in the visible and near-infrared region,making a blue/violet filter unnecessary.The material of the SOI layer is high-resistivity floating-zone silicon which can cause the neutral N type SOI layer to become fully depleted after doping with a P type impurity.This can improve the collection efficiency of short-wavelength photogenerated carriers.The device structure was optimized through numerical simulation,and the results show that the photodiode is a kind of high performance photodetector in the blue/violet region.
According to Lambert’s law, a novel structure of photodetectors, ie photodetectors in siliconon-insulator, is proposed. By choosing a certain thickness value for the SOI layer, the photodetector can absorb blue / violet light effectively and affect the responsivity of the long wavelength in the visible and near-infrared region, making a blue / violet filter unnecessary. The material of the SOI layer is high-resistivity floating-zone silicon which can cause the neutral N type SOI layer to become fully depleted after doping with a P type impurity .This can improve the collection efficiency of short-wavelength photogenerated carriers. The device structure was optimized through numerical simulation, and the results show that the photodiode is a kind of high performance photodetector in the blue / violet region.