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对美国测试与材料学会提供的二氧化硅标准样品,用四台电子能谱仪进行了氩离子对二氧化硅的溅射产额的会测。在1KeV、3KeV 和5KeV 离子能量下,溅射速率均与离子流密度成线性关系。而溅射产额与离子能量的关系在1～5KeV 的范围内是随能量增加而增大。在入射角为52°的情形,氩离子对二氧化硅的产额值是:0.94分子/离子(1KeV)、1.09分子/离子(3KeV)和1.25分子/离子(SKeV)。在1KeV 的情况下,52°入射角时的产额约为正入射时的2.4倍。
For the silica standard samples provided by the American Society for Testing and Materials, the sputter yield of argon ions on silicon dioxide was measured with four electron spectrometers. At 1 KeV, 3 KeV and 5 KeV ion energies, the sputtering rate is linear with the ion current density. The relationship between sputtering yield and ion energy in the range of 1 ~ 5KeV increases with increasing energy. The argon ion-to-silica yield was 0.94 molecules / ion (1 KeV), 1.09 molecules / ion (3 KeV) and 1.25 molecules / ion (SKeV) at an incident angle of 52 °. At 1 keV, the yield at a 52 ° incidence is about 2.4 times higher than at normal incidence.