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利用温度梯度法在高温高压国产六面顶压机上成功合成出尺寸达4mm的优质Ⅱb型宝石级金刚石。利用显微红外吸收光谱对所合成的黄色、无色及蓝色宝石级金刚石的氮、硼杂质进行了测试。通过对比分析认为所合成的除氮、掺硼蓝色宝石级金刚石为Ⅱb型。利用四探针法和霍尔效应法对不同掺硼量所合成的Ⅱb型宝石级金刚石半导体性质进行了测试;总结了掺硼量与金刚石半导体性质之间的变化关系;分析认为硼的添加对Ⅱb型宝石级金刚石的半导体特性的变化起到了决定性作用。
The high quality Ⅱb gem grade diamond with the size of 4mm has been successfully synthesized by the temperature gradient method in the high temperature and pressure domestically produced six-sided top press. The nitrogen and boron impurities of the synthesized yellow, colorless and blue gem diamonds were tested by microscopic infrared absorption spectroscopy. Through comparative analysis that the synthesis of nitrogen, boron-doped blue gem grade diamond type Ⅱ b. The properties of Ⅱb-type gem-quality diamond semiconductors synthesized by different boron content were tested by four-probe method and Hall-effect method. The relationship between the amount of boron doping and the properties of diamond semiconductors was summarized. IIb type gem diamond semiconductor characteristics of the change has played a decisive role.