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采用外加电场极化法,运用两步多次高电压脉冲触发的技术,成功地制备出均匀极化区面积为32mm×40mm、具有21个周期(Λ=27-31μm)、Z切0.5mm厚度的PPLN晶片。晶片的畴反转占空比接近50%,每一周期的大小为1.5mm×40mm,可用于大调谐范围的光参量振荡器。同时,实验给出了制备高品质PPLN晶片的高压触发脉冲的波形,其中,第一步高压触发脉冲为5μs,强度为100kV/mm,第二步高压触发脉冲宽度为50ms,强度为24kV/mm。
By using the method of applied electric field polarization and the technique of two-step multiple high-voltage pulse triggering, the uniform polarization area of 32mm × 40mm, 21 cycles (Λ = 27-31μm) and Z cut of 0.5mm PPLN chip. The domain inversion duty cycle of the wafer is close to 50%, and the size of each cycle is 1.5mm × 40mm, which can be used for optical parametric oscillators with large tuning range. In the meantime, the waveform of high-voltage triggering pulse for preparing high-quality PPLN wafers is shown in the experiment. In the first step, the high-voltage triggering pulse is 5μs, the intensity is 100kV / mm, the second is the high-voltage triggering pulse width is 50ms, the intensity is 24kV / mm .