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研究了脉冲激发下单个半导体量子点中单光子发射的统计特性.在旋转波近似条件下,由系统粒子数演化主方程并结合量子回归理论推导了二阶相关函数的运动方程,利用此方程讨论了二阶相关函数随输入脉冲面积的关系.在窄脉冲宽度的脉冲激发下,单光子的发射概率p和效率η都随着强度的增强而产生振荡.研究表明,采用窄脉冲宽度,当输入脉冲面积在π附近时可以得到较高的单光子发射效率.
The statistical properties of single-photon emission in a single semiconductor quantum dot under pulsed excitation are studied. Under the condition of the rotating wave approximation, the equations of motion for the second-order correlation function are deduced from the main equation of system particle number evolution and the quantum regression theory. The second-order correlation function with the input pulse area.Under the pulse width of narrow pulse width, the emission probability p and efficiency η of one-photon oscillate with the increase of the intensity.Research shows that with the narrow pulse width, when the input A high single-photon emission efficiency can be obtained when the pulse area is around π.