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对长脉宽脉冲激光弯曲后的硅片试件进行了表面形貌以及晶相等特性分析.结果表明,激光作用于硅片表面后形成了三种特殊区域,分别为边缘区域、过渡区域、主作用区域.其中过渡区域和主作用区域变化比较明显,分别出现了堆积层错现象和波纹状形貌.对主作用区域进行拉曼光谱检测,分析谱图没有发现典型的非晶硅转变,只是存在微弱的Si-Ⅰ→Si-Ⅲ转化.利用X射线定向仪检测原始和激光作用后表面的晶向,发现激光作用区域晶向变化较明显,存在晶体畸变和晶粒细化现象.
The characteristics of the surface morphology and the crystal phase of the silicon wafer after laser pulse bending are analyzed.The results show that the laser has three special areas formed on the surface of silicon wafer, which are the edge area, the transition area, the main area The transitional area and the main active area changed obviously, and the stacking fault and corrugated morphology appeared respectively.The Raman spectrum of the main active area was detected, and the typical amorphous silicon transition was not observed in the analysis spectrum, only There is faint Si-Ⅰ → Si-Ⅲ transformation.Using X-ray direct analyzer to detect the original and laser crystal surface orientation, we find that the crystal orientation of the laser active region changes obviously, and the crystal distortion and grain refinement exist.