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CCD晶硅刻蚀相比于传统CMOS工艺的多晶硅刻蚀需要多晶硅对氮化硅更高的刻蚀选择比,更长的过刻蚀时间。采用Cl2+He,Cl2+He+O2,Cl2+He+O2+HBr三种工艺气体组分在Lam4420机台进行了多晶硅刻蚀实验,研究了不同气体配比、不同射频功率对刻蚀速率、选择比、条宽、侧壁形貌等参数的影响。通过优化工艺参数,比较刻蚀结果,最终获得了适合于CCD多层多晶硅刻蚀的工艺条件。
CCD Crystalline Etch Polysilicon requires a higher etch selectivity of polysilicon to silicon nitride than a conventional CMOS process, with a longer over-etch time. Polysilicon etching experiment was carried out on Lam4420 with Cl2 + He, Cl2 + He + O2, Cl2 + He + O2 + HBr process gases. The effect of different gas ratio and different RF power on the etching rate, Choose ratio, width, sidewall morphology and other parameters. By optimizing the process parameters and comparing the etching results, the process conditions suitable for multi-layer polysilicon polysilicon etching are finally obtained.