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通过电子束和接触式曝光相结合的混合曝光方法，并利用复合胶结构，一次电子束曝光制作出具有T型栅的HFET(HeterojunctionField－EffectTransistor)器件，并对0.1μm栅长HFET器件的整套工艺及器件性能进行了研究。形成了一整套具有新特点的HFET器件制作工艺，获得了良好的器件性能(ft=78GHz;gm=440ms/mm)。
A hybrid HET (HeterojunctionField-EffectTransistor) device with a T-shaped gate was fabricated by a combination of electron beam and contact exposure using a composite adhesive structure and a single electron beam exposure. The entire process for a 0.1μm gate-length HFET device And device performance were studied. A complete set of HFET device fabrication processes with new features is achieved, resulting in good device performance (ft = 78GHz; gm = 440ms / mm).