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利用直流磁控溅射在未加热的BK-7玻璃基片上沉积In2O3与ZnO混合(IZO)薄膜,通过原子力显微镜(AFM)、分光光度计和四探针法研究IZO薄膜在HCl溶液中不同腐蚀时间前后的表面形貌以及光电性质的变化。结果表明:随着腐蚀时间的增加,薄膜的表面均方根粗糙度(RMS)和方块电阻(Rs)都呈现先增后减再增的现象;而薄膜的光学透射率则是先减后增再减。由于ZnO比In2O3更容易在HCl溶液中进行腐蚀,使得样品经腐蚀后出现孔洞结构,孔宽与孔深都随着腐蚀时间的增加而增大,这种具有纳米孔洞结构的透明导电薄膜在未来的光电子器件有潜在应用。
IZO thin films were deposited on un-heated BK-7 glass substrates by direct current magnetron sputtering. The corrosion of IZO thin films in HCl solution was investigated by atomic force microscopy (AFM), spectrophotometer and four probe methods Time before and after the surface morphology and optical properties of the changes. The results show that the root mean square roughness (RMS) and sheet resistance (Rs) of the films increase first and then decrease and then increase with the increase of etching time. The optical transmittance of the films decreases first and then increases Minus again Since ZnO is easier to be etched in HCl solution than In2O3, the hole structure appears after the sample is etched, and the hole width and hole depth both increase with the increase of the etching time. In the future, the transparent conductive film with the nano- Of the optoelectronic devices have potential applications.