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在2.5 G试验线上研究了金属氧化物IGZO薄膜晶体管(TFT)的性能,获得良好的IGZO TFT性能,迁移率为10.65cm2/V·s,阈值电压Vth为-1.5 V,开态电流为1.58×10-4 A,关态电流为3.0×10-12,开关比为5.27×107,亚阈值摆幅为0.44V/Dev,验证了TFT的均一性和重复性。此外还研究了可见光照和电压偏应力对IGZO TFT性能的影响,可见光照不会促使IGZO TFT Vth的漂移,进行2 h的负偏电压应力测试,IGZO TFT的Vth几乎没有漂移。使用上述IGZO TFT基板成功地制作了中国大陆第一款Oxide-LCD样机(18.5英寸),展现出良好的效果。
The performance of metal oxide IGZO thin film transistor (TFT) was investigated on a 2.5 G test line to obtain good IGZO TFT performance with a mobility of 10.65 cm 2 / V · s, a threshold voltage Vth of -1.5 V and an on-state current of 1.58 × 10-4 A, the off-state current is 3.0 × 10-12, the switching ratio is 5.27 × 107, and the subthreshold swing is 0.44V / Dev, which verifies the uniformity and repeatability of the TFT. In addition, the influence of visible light and voltage deviator stress on the performance of IGZO TFT was also studied. The visible light did not cause the Vth drift of IGZO TFT. The negative bias voltage stress test of 2 hours was carried out. The Vth of IGZO TFT had almost no drift. The first prototype of Oxide-LCD in Mainland China (18.5 inches) was successfully fabricated using the IGZO TFT substrate described above, showing good results.