在不同弹性抛光布、不同氧化浓度、不同 p H值的抛光液等条件下进行了化学机械抛光试验 ,并用 TEM测量了晶片亚表面损伤层厚度 .研究发现抛光布的弹性及抛光液的氧化和化学去除能力决定了 Ga As抛光晶片的亚表面损伤层深度 ,并分析和讨论了其原因 Chemical mechanical polishing tests were carried out under different elastic polishing cloths, polishing liquids with different oxidation concentrations and different p H values, and the damage thickness of the subsurface of the wafer was measured by TEM. It was found that the elasticity of the polishing cloth and the oxidation of the polishing liquid The chemical ablation ability determines the subsurface damage depth of the Ga As wafer and analyzes and discusses its causes