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提出了脉冲式阳极氧化生长碲镉汞表面钝化膜的方法．自行设计研制成功一种新颖的脉冲式阳极氧化装置，获得了优于传统恒流方式生长的碲镉汞阳极氧化膜界面，并结合扫描电子显微镜、俄歇电子能谱和光电导衰退法观测了脉冲氧化对碲镉汞表面的影响．探索到一种能够使表面复合速度降得最低的最佳脉冲氧化条件．对脉冲氧化膜的生长机制进行了分析讨论
A pulsed anodic oxidation of HgCdTe surface passivation film was proposed. A novel pulsed anodizing device was designed and developed by ourselves. The interface of the CdTe anodized film was better than that of the conventional constant-current growth method. Combined with scanning electron microscopy, Auger electron spectroscopy and photoconductivity decay method, the impulse Effect of Oxidation on the Surface of HgCdTe. The best pulse oxidation conditions were found to minimize the surface recombination velocity. The growth mechanism of pulse oxide film was analyzed and discussed