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以Al(OH)3和ZnO为原料,采用固相法制备掺铝氧化锌半导体粉体,借助XRD和SEM等分析手段,探讨了煅烧温度、保温时间、预烧和掺杂量等因素对粉体电性能的影响。结果表明:Al(OH)3的掺杂量为1%时,ZnO半导体粉体的电阻率最低;煅烧温度、保温时间和预烧工艺影响粉体的电阻率;直接煅烧制备的粉体较佳工艺是在1 250℃煅烧150 min,通过预烧-煅烧制备的粉体较佳工艺是在1 300℃煅烧90 min。
Al (OH) 3 and ZnO as raw materials, solid-phase method was used to prepare aluminum-doped zinc oxide semiconductor powder. XRD and SEM were used to analyze the calcination temperature, holding time, Effect of body electrical properties. The results show that the resistivity of ZnO semiconductor powder is the lowest when the doping amount of Al (OH) 3 is 1%, the resistivity of powder is affected by calcination temperature, holding time and pre-sintering process. The powder prepared by direct calcination is better The process is calcined at 1 250 ℃ for 150 min. The best process of calcined calcined powder is calcined at 1300 ℃ for 90 min.